j , u na. 20 stern ave. springfield, new jersey 07081 u.sa mps-u45 (silicon) telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 npn silicon darlington amplifier transistor . . . designed for amplifier and driver applications, ? high dc current gain - hfe - 25,000 (mini @ tc = 200 madc 15,000 (min) @ ic - 500 madc ? collector-emitter breakdown voltage ? bvces = 40 vdc (min) @ lc= 100 iia.dc ? low collector-emitter saturation voltage - vce(sat) = 1.5 vdc? ic- 1.0 adc ? monolithic construction for high reliability ? complement to pnp mips u95 maximum ratings rating collector-emitter voltage collector-base voltage eminer-baie voltage collector current total power dissipation ? ta - 25c derate above 25c total power diuipatlon ? tc - 25c derate above 25c operating and storage junction temperature range thermal characteristics characteristic thermal resilience. junction to ambient thermal resistance, junction to case symbol vces vcb veb 1c pd po tj.thb symbol rjjal11 h?jc value unit 40 vdc 50 vdc 12 vdc 2.0 adc 1.0 watt 8.0 mw/c 10 watts 80 mw/c -55 to +150 c (max unit 12s c/w 12.5 c/w ( 1 1 f 8 ja '? measured with the device soldered into 1 typical printed circuit board. npn silicon darlington transistor ^/ '- d? ? ? a ? ? b - ~t^3~ 3 2 1 -\ a k miuii a 9 14 ? 8.60 d 038 f 3.18 6 2.54 h 3.94 j 0.! k 12. i 25.i i :? : 'n i.h q 2.39 r 1.14 c l h-+- style 1: ? pin 1. emitter 2. base 3. collectof etehs 953 7.24 <>?<* o.h ,1m 3sc 4.19 2.s9 1.40 inc 1 min 1 (l360 0.260 it 0.125 0.10 0.155 i.014 1, j6 . 15 30 "e 54 0 45 fles ma> 0.3/ ?,; i? v,'! 1 ic .11 1.ik ip" jib ?--efc j --j c 1 ; l i l j ! nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility tor any errors or omissions discovered in its use nj semi-conductors encourages customers to verify that datasheets nre current before placing orders onnljfv
mps-u45 (continued) electrical characteristics (ta - 25c unless otherwise noted) characteristic symbol typ unit i off characteristics collector-emitter breakdown voltage (ic = 100 madc, vbe -0) collector-base breakdown voltage (lc- 10owadc, ie -0) emitter-base breakdown voltage {ie = iqt/adc. lc = 0) collector cutoff current (vcb = 30 vdc, ie ? 0) emitter cutoff current (veb = 10 vdc, lc = oi bvces bvcbo bvebo icbo 'ebo 40 60 12 - - - - - - - - - - 100 100 vdc vdc vdc nadc nadc on characteristics!!) dc current gain tlc - 200 madc, vc = s.o vdc) dc = 500 madc. vce = 50 vdc) he " 1 .0 adc, vce = 5.0 vdc) collector-emitter saturation voltage (lc- 1.0 adc. ib -2.0 madc) base-emttter saturation voltage he- 1.0 adc, ib- 2.0madcl b??-emitur on voltage (lc . 1 .0 adc. vce ' 5.0 vdc) hfe vce (sat) vee(sat) vb{on) 25,000 15.000 4.000 - - 65,000 35.000 12.000 1,2 1.85 1.7 150.000 - - 1.5 2.0 2.0 - vdc vdc vdc dynamic characteristics small-signal current gain '1' (lc = 200 madc, vce = s.o vdc, f = 100mhz) collector base capacitance (vcb- 10 vdc, ie ?o, f - i.omhz) lhf.1 ccb 1.0 - 3.2 2.5 - 6.0 - pf <1>pulwt?t; pulw width s30()m?, duty cyci*2 0%. uniwatt darlington tr?nsisto,rc can b? u?d in any number of low powar ?ipptic.itioni, tuch h r?l?y driv?r?, motor control and a* u?n*r?l pui-pow ampliirtr*. as *n audio amplifier thaw dovicat, when u*?d ?? a corriplamtntary pair, can dn'v* 3.5 wattt into a 3.2 ohm ipaikar ui.ng a 14 volt supply with last than one par cent dittortion, b?cau?? of thahigh gain th? bate driva requlr-ament it as low ai 1 ma in thi> application. th*y ar? nlio ul?ful ai power dnvars for high current application tuch ** voltafl* regulator*.
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